Part Number | IPD50N04S408ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 40V 50A TO252-3-313 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 17µA |
Gate Charge (Qg) (Max) @ Vgs | 22.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1780pF @ 6V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 46W (Tc) |
Rds On (Max) @ Id, Vgs | 7.9 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-313 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD50N04S408ATMA1
TOSIHBA
80000
4.4375
Shenzhen Fuxinwei Semiconductor Co., Ltd
IPD50N04S408ATMA1
TOSHIDA
2000
5.35
Fly-Wing Technology (HK) Co., Limited
IPD50N04S408ATMA1
TOSHBIA
5000000
1.7
Hongkong Shengshi Electronics Limited
IPD50N04S408ATMA1
TOSHI
136259
2.6125
Kunlida Electronics (HK) Limited
IPD50N04S408ATMA1
TOSIBA
402528
3.525
Shenzhen WTX Capacitor Co., Ltd.