Part Number | IPB60R160C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 23.8A TO263 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 750µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 176W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 11.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB60R160C6
TOSHBIA
20841
1.57
Useta Tech (HK) Limited
IPB60R160C6
TOSHI
9830
2.3575
HK HEQING ELECTRONICS LIMITED
IPB60R160C6
TOSIBA
1000
3.145
STH Electronics Co.,Ltd
IPB60R160C6
TOSIHBA
22
3.9325
Yingxinyuan INT'L (Group) Limited
IPB60R160C6
TOSHIDA
11160
4.72
N&S Electronic Co., Limited