Part Number | IPA90R1K0C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 900V 5.7A TO220-3 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 370µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 32W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |
Image |
IPA90R1K0C3
TOSHBIA
2688
1.61
Shenzhen Hongying Micro Technology Co., Ltd
IPA90R1K0C3
TOSHI
23308
2.57
Useta Tech (HK) Limited
IPA90R1K0C3
TOSIBA
22800
3.53
HK HEQING ELECTRONICS LIMITED
IPA90R1K0C3
TOSIHBA
25800
4.49
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPA90R1K0C3
TOSHIDA
80
5.45
Yingxinyuan INT'L (Group) Limited