Part Number | HN4K03JUTE85LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 20V 0.1A USV |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 8.5pF @ 3V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 2.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | USV |
Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
Image |
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