Part Number | HN4C51J |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2NPN 120V 0.1A SMV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN (Dual) Common Base |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 300mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | SMV |
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HN4C51J
TOSHBIA
5132
0.5
Dedicate Electronics (HK) Limited
HN4C51J
TOSHI
4836
1.7075
Hongkong Shengshi Electronics Limited
HN4C51J
TOSIBA
9989
2.915
CIS Ltd (CHECK IC SOLUTION LIMITED)
HN4C51J(TE85L,F)
TOSIHBA
3392
4.1225
MY Group (Asia) Limited
HN4C51J
TOSHIDA
930
5.33
Cicotex Electronics (HK) Limited