Part Number | HN3C51FGR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2NPN 120V 0.1A SM6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 300mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
HN3C51F-GR(TE85L,F
TOSHBIA
35800
1.26
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
HN3C51F-GR(TE85L,F
TOSHI
8000
1.8725
MY Group (Asia) Limited
HN3C51F-GR
TOSIBA
6000
2.485
HongKong Wei Ya Hua Electronic Technology Co.,Limited
HN3C51F-GR
TOSIHBA
2966
3.0975
Lattice International Trading Co., Limited
HN3C51F-GR
TOSHIDA
5529
3.71
Dedicate Electronics (HK) Limited