Part Number | HN3A51F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2PNP 120V 0.1A SM6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 300mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
HN3A51F
TOSHBIA
5513
0.4
Dedicate Electronics (HK) Limited
HN3A51F
TOSHI
21000
1.2675
Yingxinyuan INT'L (Group) Limited
HN3A51F
TOSIBA
1000
2.135
ONSTAR ELECTRONICS CO., LIMITED
HN3A51F
TOSIHBA
4500
3.0025
Bonase Electronics (HK) Co., Limited
HN3A51F
TOSHIDA
630
3.87
Top Electronics Co.,