Part Number | HN2C01FE-GR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2NPN 50V 0.15A ES6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 100mW |
Frequency - Transition | 60MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
HN2C01FE-GR
TOSHBIA
8281
1.32
ASSET GREEN TECH, INC
HN2C01FE-GR
TOSHI
5442
2.19
HK HEQING ELECTRONICS LIMITED
HN2C01FE-GR
TOSIBA
7706
3.06
CIS Ltd (CHECK IC SOLUTION LIMITED)
HN2C01FE-GR
TOSIHBA
1732
3.93
Cicotex Electronics (HK) Limited
HN2C01FE-GR
TOSHIDA
1733
4.8
Yingxinyuan INT'L (Group) Limited