Part Number | HN2A01FE-Y(TE85L,F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS 2PNP 50V 0.15A ES6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
Power - Max | 100mW |
Frequency - Transition | 80MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
HN2A01FE-Y(TE85L,F
TOSHBIA
45000
0.36
Digchip Technology Co.,Limited
HN2A01FE-Y(TE85L,F
TOSHI
8000
0.8975
MY Group (Asia) Limited
HN2A01FU-GR TE-85L
TOSIBA
9000
1.435
Bonase Electronics (HK) Co., Limited
HN2A01FE-GR(TE85LF
TOSIHBA
8000
1.9725
MY Group (Asia) Limited
HN2A01FU-Y(TE85L,F)
TOSHIDA
1000
2.51
E-Power Market Co.,Ltd