Part Number | HN1B04F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Toshiba |
Description | TRANS NPN/PNP 30V 0.5A SM6 |
Series | - |
Packaging | |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA, 1V |
Power - Max | 300mW |
Frequency - Transition | 200MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
HN1B04F(TE85L,F)
TOSHBIA
2710
0.01
MY Group (Asia) Limited
HN1B04F
TOSHI
7769
0.5775
CIS Ltd (CHECK IC SOLUTION LIMITED)
HN1B04F
TOSIBA
4284
1.145
Hong Kong Fly Bird Technology Limited
HN1B04F
TOSIHBA
1321
1.7125
Cicotex Electronics (HK) Limited
HN1B04F
TOSHIDA
5287
2.28
Yingxinyuan INT'L (Group) Limited