Description
Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction-to-Ambient. VCE . 200. C/W. Thermal Resistance, Junction-to-Case. VCB. 83.3. C/W. Stresses Elektrische Eigenschaften. Electrical Features. . . Niedrige Schaltverluste. Low Switching Losses. . . Trench IGBT 4. Trench IGBT 4. . . VCEsat mit positivem THERMAL CHARACTERISTICS. Characteristics. Symbol. Max. Unit. Thermal Resistance, Junction-to-Case. R JC. 1.25 _C/W. Stresses exceeding Maximum
Part Number | HFS2N60 |
Brand | Toshiba |
Image |
HFS2N60
TOSHBIA
10026
1.24
HK HEQING ELECTRONICS LIMITED
HFS2N60
TOSHI
200000
2
Shenzhen WTX Capacitor Co., Ltd.
HFS2N60
TOSIBA
2500
2.76
Cicotex Electronics (HK) Limited
HFS2N60
TOSIHBA
17500
3.52
Ysx Tech Co., Limited
HFS2N60
TOSHIDA
3000
4.28
Yingxinyuan INT'L (Group) Limited