Part Number | FQP70N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 57A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 28.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
FQP70N10
TOSIHBA
6670
3.9325
Kang Da Electronics Co.
FQP70N10
TOSHIDA
3628
5.06
JI Sheng (HK) Electronics Co., Limited
FQP70N10
TOSHBIA
6489
0.55
Shenzhen Taochip Electronic Co.,Ltd
FQP70N10
TOSHI
6184
1.6775
Viassion Technology Co., Limited
FQP70N10
TOSIBA
3922
2.805
Belt (HK) Electronics Co