Part Number | FGA6560WDF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Toshiba |
Description | IGBT 650V 120A 306W TO-3PN |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 180A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
Power - Max | 306W |
Switching Energy | 2.46mJ (on), 520µJ (off) |
Input Type | Standard |
Gate Charge | 84nC |
Td (on/off) @ 25°C | 25.6ns/71ns |
Test Condition | 400V, 60A, 6 Ohm, 15V |
Reverse Recovery Time (trr) | 110ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3PN |
Image |
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