Part Number | FDS7788 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 18A 8-SOIC |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 3845pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS7788
TOSHBIA
81899
1.14
HK HEQING ELECTRONICS LIMITED
FDS7788 MOS()
TOSHI
4591
1.81
Ysx Tech Co., Limited
FDS7788
TOSIBA
33800
2.48
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDS7788
TOSIHBA
2500
3.15
Yingxinyuan INT'L (Group) Limited
FDS7788
TOSHIDA
3000
3.82
Gallop Great Holdings (Hong Kong) Limited