Part Number | FCPF7N60YDTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 7A TO-220F |
Series | SuperFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 (Y-Forming) |
Package / Case | TO-220-3 Full Pack, Formed Leads |
Image |
FCPF7N60YDTU
TOSHBIA
645
0.66
Dan-Mar Components Inc.
FCPF7N60YDTU
TOSHI
14000
1.555
MY Group (Asia) Limited
FCPF7N60YDTU
TOSIBA
18000
2.45
MASSTOCK ELECTRONICS LIMITED
FCPF7N60YDTU
TOSIHBA
800
3.345
Hongkong K.L.N Electronic Technology Co., Ltd.
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TOSHIDA
38000
4.24
Belt (HK) Electronics Co