Part Number | FCPF190N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V TO-220-3 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 199 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 |
Package / Case | TO-220-3 Full Pack |
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Hot Offer
FCPF190N60
TOSIHBA
1069
4.8375
TMS INTERNATIONAL TECH (HK) LIMITED
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TOSHIDA
5000
6.05
Superior Electronics Limited
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7987
1.2
HK HEQING ELECTRONICS LIMITED
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3000
2.4125
IC SHOP ELECTRONICS CO., LIMITED
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2510
3.625
CIS Ltd (CHECK IC SOLUTION LIMITED)