Part Number | DTC115EUAT106 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 200MW UMT3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 20mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 100k |
Resistor - Emitter Base (R2) (Ohms) | 100k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | UMT3 |
Image |
DTC115EUAT106
TOSHBIA
173
1.69
SUNTOP SEMICONDUCTOR CO., LIMITED
DTC115EUAT106
TOSHI
3778
2.75
AIC Semiconductor Co., Limited
DTC115EUAT106
TOSIBA
1560
3.81
ZHONG HAI SHENG TECHNOLOGY LIMITED
DTC115EUAT106
TOSIHBA
4080
4.87
DES TECHNOLOGY (HK) LIMITED
DTC115EUAT106
TOSHIDA
3351
5.93
Riking Technology (HK) Co., Limited