Part Number | DTC114YMT2L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS NPN 150MW VMT3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 70mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Image |
DTC114YMT2L
TOSHBIA
180
0.3
SUNTOP SEMICONDUCTOR CO., LIMITED
DTC114YMT2L
TOSHI
8000
0.9
DES TECHNOLOGY (HK) LIMITED
DTC114YMT2L
TOSIBA
596634
1.5
RX ELECTRONICS LIMITED
DTC114YMT2L
TOSIHBA
16000
2.1
SEHOT CO., LIMITED
DTC114YMT2L
TOSHIDA
6000
2.7
Riking Technology (HK) Co., Limited