Part Number | DTA123YUAT106 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 200MW UMT3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | UMT3 |
Image |
DTA123YUAT106
TOSHBIA
839
0.57
Beijing jingbei Components Co.,Ltd
DTA123YUAT106
TOSHI
543
1.2275
SUNTOP SEMICONDUCTOR CO., LIMITED
DTA123YUAT106
TOSIBA
5078
1.885
RX ELECTRONICS LIMITED
DTA123YUAT106
TOSIHBA
2189
2.5425
Cicotex Electronics (HK) Limited
DTA123YUAT106
TOSHIDA
2838
3.2
N&S Electronic Co., Limited