Description
DB101S-G Thru. DB107S -G. Dimensions in inches and (millimeter). QW-BBR50. Forward Current: 1.0A. RoHS Device. DBS. Comchip Technology CO., LTD. DB107S -HF. HF. Dimensions in inches and (millimeter). QW-JBR08. Forward Current: 1.0A. RoHS Device. DBS. Comchip Technology CO., LTD. 0.134(3.40). DB107 . 1 Amp Single Phase. Glass Passivated. Bridge Rectifier. 50 to 1000 Volts . Features. 4-PIN DIP Package. Glass Passivated Diode Construction. DB107 -G. Parameter. Symbol. Unit. QW-BBR69. Maximum Recurrent Peak R. Voltage everse. Maximum RMS Voltage. Maximum DC Blocking Voltage. Revision: 19-Aug-13. 1. Document Number: 88573. For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Part Number | DB107S |
Brand | Toshiba |
Image |
DB107S
TOSHBIA
2740
0.89
HK HEQING ELECTRONICS LIMITED
DB107S
TOSHI
180
2.1075
SUNTOP SEMICONDUCTOR CO., LIMITED
DB107S
TOSIBA
190500
3.325
CIS Ltd (CHECK IC SOLUTION LIMITED)
DB107S
TOSIHBA
5000
4.5425
WIN AND WIN ELECTRONICS LIMITED
DB107S
TOSHIDA
244500
5.76
Belt (HK) Electronics Co