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Description
DATASHEET D45H11G . TO 220. (Pb Free). 50 Units/Rail. D44H11G. TO 220. (Pb Free). 50 Units/Rail. D44H8G. TO 220. (Pb Free). 50 Units/Rail. 1. BASE. EMITTER 3. Continuo us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. D45H11G . Pb-free. Active. PNP. General. Purpose. 10. 80. Jun 20, 2014 D45H11G . MJD45H11T4G. MJD340RLG. MJB45H11G. NJL0302DG. MJD340G. MJF45H11G. NJW0302G. MJE5850G. MJE5851G. Sep 2, 2010 D45H11G . D45H8G. D45VH10G. MJB44H11G. MJB44H11T4. MJB44H11T4G. MJB45H11G. MJB45H11T4. MJB45H11T4G. MJC5038WP. Jan 24, 2014 MJD44H11RLG. NJD2873T4G. MJD44H11T4G. NJW0281G. Affected Device List for Bipolar Power Planar (PNP). D45H11G . MJD45H11G.
| Part Number | D45H11G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Toshiba |
| Description | TRANS PNP 80V 10A TO220AB |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Power - Max | 2W |
| Frequency - Transition | 40MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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