Toshiba

Description

DESCRIPTION. The 60KS200C & 90KS200C series of bidirectional transient voltage suppression modules are designed for use in shipboard equipment and other power servicing equipment. These modules protect sensitive semiconductor components from transients resulting from power interuptions and shore power General Description. The ACT F128K8 is a high speed, 1 megabit CMOS monolithic. Flash module designed for full temperature range military, space, or high reliability applications. This device is input TTL and output CMOS compatible. The command register is written by bringing write enable (WE) and chip enable (CE) General Description. The ACT S512K8 is a high speed, 4 Megabit CMOS. Monolithic SRAM designed for full temperature range military, space, or high reliability mass memory and fast cache applications. The MCM is input and output. TTL compatible. Writing is executed when the write enable (WE) and chip enable. Jan 24, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 480. mJ. IAR. Avalanche Current . -. A. EAR. Repetitive Avalanche Energy . -. mJ dv/dt. Peak Diode Recovery dv/dt . 4.5. V/ns. TJ. Operating Junction. -55 to 150. TSTG. Storage Temperature Range. Lead Temperature. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. Collector Emitter Sustaining Voltage. VCEO. 400. Vdc. Collector Base Breakdown Voltage. VCES. 700. Vdc. Emitter Base Voltage. VEBO. 9.0. Vdc. Collector Current Continuous. IC. 8.0. Adc. Collector Current Peak (Note 1). ICM. 16. Adc. Base Current. Continuous .