Toshiba

Description

Page 1. April 2011. Doc ID 018729 Rev 1. 1/10. 10. 2SD1047. High power NPN epitaxial planar bipolar transistor. Features. High breakdown voltage Page 1. 1/20. STA575. July 2003 s MONOCHIP BRIDGE STEREO AMPLIFIER. ON BASH. . ARCHITECTURE s 80+80W OUTPUT POWER @ RL = 4/8 ,. Page 1. Document Number: 91238 www.vishay.com. S11-0444-Rev. B, 14-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT Page 1. Semiconductor Components Industries, LLC, 2013. December, 2013 Rev. 1. 1. Publication Order Number: AND9129/D. AND9129/D. Page 1. Semiconductor Components Industries, LLC, 2012. August, 2012 Rev. 4. 1. Publication Order Number: 2N5401/D. 2N5401. Amplifier