Part Number | BUZ31H3045A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 200V 14.5A TO263 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 95W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
BUZ31H3045A
TOSHBIA
5728
1.41
Dedicate Electronics (HK) Limited
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4595
2.3975
Bonase Electronics (HK) Co., Limited
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6072
3.385
N&S Electronic Co., Limited
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4.3725
Cicotex Electronics (HK) Limited
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5.36
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED