Description
Sep 25, 2000 2SD517. American Microsemiconductor. BU508A . BU508A . Philips Semiconductor. MJC10021WP. PTC10021. American Microsemiconductor. UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD. 1. QW-R214-001,A. SILICON DIFFUSED POWER. BU508 -1. General Information. Extended Product Type: BU508 -1. Product ID: 7TAA117140R0011. EAN: 0785991019094. Catalog Description: 3 BUSHING Mar 10, 2014 These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series. BU508 **. 8.0. 125. 1,000. 700. 5.0. 4.5. 2,000. - -. 7.0 . BU508A **. 8.0. 125. 1,500. 700. 1.0. 4.5. 2,000. - -. 7.0 . BU508D**. 8.0. 125. 1,500. 700. 1.0. 4.5. 2,000.
Part Number | BU508A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Toshiba |
Description | TRANS NPN 700V 8A TO-247 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 4.5A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Power - Max | 125W |
Frequency - Transition | 7MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
Image |
BU508A
TOSHBIA
27172
0.73
Shenzhen Lichengda Technology Co.,LIMITED
BU508A
TOSHI
10000
1.55
Belt (HK) Electronics Co
BU508A
TOSIBA
9
2.37
Semitech Inc
BU508A
TOSIHBA
100
3.19
Antony Electronic Ltd.
BU508A
TOSHIDA
128
4.01
FLOWER GROUP(HK)CO.,LTD