Description
The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is Nov 25, 2005 This AOS product reliability report summarizes the qualification result for AO7407 /AO7407L. Accelerated environmental tests are performed on AO7407 Marking Description. SC-70(3L) PACKAGE MARKING DESCRIPTION. NOTE: P - Product number code. N - Assembly location code. W - Year and
Part Number | AO7407 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 1.2A SC70-3 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 630mW (Ta) |
Rds On (Max) @ Id, Vgs | 135 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-3 |
Package / Case | SC-70, SOT-323 |
Image |
AO7407
TOSHBIA
5000000
1.22
Hongkong Shengshi Electronics Limited
AO7407
TOSHI
850000
2.6075
Far East Electronics Technology Limited
AO7407
TOSIBA
3000
3.995
SEHOT CO., LIMITED
AO7407
TOSIHBA
53290
5.3825
ATLANTIC TECHNOLOGY LIMITED
AO7407
TOSHIDA
4868000
6.77
Shenzhen WTX Capacitor Co., Ltd.