Description
AO4264E . General Description. Product Summary. VDS. ID (at VGS=10V). 13.5A. RDS(ON) (at VGS=10V). < 9.8m . RDS(ON) (at VGS=4.5V). < 13.5m . This AOS product reliability report summarizes the qualification result for AO4264E . Accelerated environmental tests are performed on a specific sample size, SO-8 PACKAGE MARKING DESCRIPTION. CODE. AO4264E . 4264E. PART NO. DESCRIPTION. Green product. AO4264E Marking Description. Document No. This AOS product reliability report summarizes AOS Product Reliability result. The published product reliability data combines the results from new product AO4264E . SO-8. Single. SMPS. N. Yes. No. 60. 20. 13. AO4268. SO-8. Single. SMPS. N. No. No. 60. 20. 19. AO4450. SO-8. Single. Load Switch. N. No. No. 40.
Part Number | AO4264E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 60V 13.5A 8SO |
Series | AlphaSGT |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta) |
Rds On (Max) @ Id, Vgs | 9.8 mOhm @ 13.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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