Part Number | 2SK879-Y |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - JFETs |
Brand | Toshiba |
Description | JFET N-CH 0.1W USM |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | - |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V |
Current Drain (Id) - Max | - |
Voltage - Cutoff (VGS off) @ Id | 400mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V |
Resistance - RDS(On) | - |
Power - Max | 100mW |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Image |
Hot Offer
2SK879-Y
TOSHIDA
30000
3.44
DES TECHNOLOGY (HK) LIMITED
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74884
1.73
Cicotex Electronics (HK) Limited
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368000
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Shenzhen WTX Capacitor Co., Ltd.
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54700
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
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1000
3.0125
Yingxinyuan INT'L (Group) Limited