(4/5) based on 15 customer reviews
Description
DATASHEET Jul 1, 2011 2SK3767 . C10. 3.3 nF. 2 kV. Q4. BC847C reserved. 1. 2. 1. 2. D10. PMBD914. 1. AUXPFC. GPFC. FBPFC. VBUS. BOOST. BOOST. VBUS. 2. Aug 9, 2012 2SK3767 . GLHB. SHHB. WB2. VCdc. EOL. IFB. 7. T3C. 68 nF. 100 V. C13. D9. PMBD6100. 68 nF. 100 V. R16. 3.3 . 1 %. 0W25. R17. 3.3 . Feb 3, 2012 F1 fuse ceramic; 1 A. 0001.2504. SCHURTER. L1. HB inductor; 2 mH; 2.6 A. 760801080. W rth Elektronik. Q1. 2SK3767 . 2SK3767 (Q). Toshiba. 1. MOSFET, N-channel, 600 V, 2 A, 4.5 W, TO-220V. Toshiba. 2SK3767 . Q2, Q3, Q7,. Bipolar, NPN, 40 V, 200 mA, 330 mW, SOT-23. Infineon. MMBT3904LT1. 4.
| Part Number | 2SK3767 |
| Brand | Toshiba |
| Image |  |
2SK3767
TOSHBIA
5020
0.29
HK HEQING ELECTRONICS LIMITED
2SK3767
TOSHI
32431
1.17
Hongkong Dasenic Electronic Limited
2SK3767(STA4,X,M)
TOSIBA
50000
2.05
Redstar Electronic Limited
2SK3767
TOSIHBA
60000
2.93
Yingxinyuan INT'L (Group) Limited
2SK3767
TOSHIDA
153180
3.81
Cicotex Electronics (HK) Limited
