Description
Apr 1, 2010 The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high May 17, 2005 Absolute Maximum Ratings. Parameter. Units. ID @ VGS = 10V, TC = 25 C. Continuous Drain Current. 7.0. ID @ VGS = 10V, TC = 100 C . 1 85. . 2010/12/24. oHS oHS Apr 1, 2010 2SK3326 . 10. 0.85. N. 2SK3326B. 10. 1. N. 2SK2362. 12. 0.6. N. 2SK3456. 12. 0.6. N. 2SK3455. 15. 0.6. N. 2SK2368. 20. 0.4. N. 2SK2370. 25.
Part Number | 2SK3326 |
Brand | Toshiba |
Image |
2SK3326
TOSHBIA
12000
0.33
Ysx Tech Co., Limited
2SK3326
TOSHI
40332
1.4475
Innovation Best Electronics Technology Limited
2SK3326
TOSIBA
30000
2.565
Hong Kong H.D.W Trading Co., Limited
2SK3326
TOSIHBA
83
3.6825
Yingxinyuan INT'L (Group) Limited
2SK3326
TOSHIDA
6
4.8
Cicotex Electronics (HK) Limited