Description
Aug 18, 2014 Power MOS FET. Precautions in Handling. R07ZZ0008EJ0200 Rev.2.00. Page 11 of 19. Aug 18, 2014. Figure 10 Experimental Circuit Waveform. +15. 1.3 H. 47 F. 2. F. 0.22. F. 3. Q1 Q2 : 2SK313 . 5. 0. 0. Waveform. 2014 8 18 8 9 10 2 . + 15. 1.3 H. 47 F. 2. F. 0.22. F. 3. Q1 Q2 : 2SK313 . 5. 0. 0.
Part Number | 2SK313 |
Brand | Toshiba |
Image |
2SK313
TOSHBIA
500
0.64
WALTON ELECTRONICS CO., LIMITED
2SK313
TOSHI
500
1.71
SY Chips Technology Co., Limited
2SK3132(Q)
TOSIBA
1000
2.78
MY Group (Asia) Limited
2SK3130
TOSIHBA
16215
3.85
Yingxinyuan INT'L (Group) Limited
2SK3131
TOSHIDA
2996
4.92
Belt (HK) Electronics Co