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Description
Mar 10, 1997 For a junction field-effect transistor (JFET) under certain operating conditions, the resistance of the drain-source channel is a function of the I- - 2SK30A . -i. = 23:1815 II less otherwise marked. # = silicon signal diode, 1. N914 CK. The $3 1 is 3m attack delay unit. A struck mote is at first imaudible, them Mar 10, 1997 The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. mW. mW/ C. Operating Junction Temperature. TJ. 135. C. Storage Temperature Range. Tstg. -65 to +150. C. Stresses exceeding Maximum Ratings may
| Part Number | 2SK30A |
| Brand | Toshiba |
| Image |  |
2SK30A
TOSHBIA
100
0.47
JWD Electronic Co., Ltd
2SK30A
TOSHI
100000
1.7475
FUSION ELECTRONICS LTD
2SK30A
TOSIBA
10000
3.025
Belt (HK) Electronics Co
2SK30A
TOSIHBA
5684
4.3025
HK HEQING ELECTRONICS LIMITED
2SK30A
TOSHIDA
100000
5.58
Top Electronics Co.,
