Part Number | 2SK2009TE85L,F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 0.2A SMINI |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
Vgs(th) (Max) @ Id | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 3V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 50MA, 2.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-59-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
2SK2009TE85LF
TOSHBIA
4501
1.46
MY Group (Asia) Limited
2SK2009TE85L,F
TOSHI
4253
1.7575
IC Chip Co., Ltd.
2SK2009TE85LF
TOSIBA
9261
2.055
Dedicate Electronics (HK) Limited
2SK2003
TOSIHBA
3100
2.3525
HONGKONG KUONGSHUN ELECTRONIC LIMITED
2SK2009(TE85LF)
TOSHIDA
9234
2.65
Pacific Corporation