Part Number | 2SJ168TE85LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 60V 0.2A S-MINI |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 50mA, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-59 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
2SJ168TE85LF
TOSHBIA
15000
1.69
MY Group (Asia) Limited
2SJ168TE85LF
TOSHI
100
2.51
Xinnlinx Electronics Pte Ltd
2SJ168TE85LF
TOSIBA
2858
3.33
Pacific Corporation
2SJ168TE85L,F
TOSIHBA
200000
4.15
TERNARY UNION CO., LIMITED
2SJ168TE85LF
TOSHIDA
8946
4.97
Viassion Technology Co., Limited