Toshiba

Description

Apr 1, 2010 2SJ160, 2SJ161, 2SJ162 . Silicon P Channel MOS FET. REJ03G0847-0200. ( Previous: ADE-208-1182). Rev.2.00. Sep 07, 2005. Description. Figure 15 is the Renesas 2SK1058/ 2SJ162 pair operating at a bias of 100mA for the output stage in quiescent steady state. The power test shows a slightly 0.10 to 0.18. 0.20 to 9.1. 2 %. 0.10 to 0.91. 1.0 to 9.1. ERX1S. 5 %. 0.10 to 0.18. 0.20 to 9.1. ERX1F. 2 %. 0.10 to 0.91. 1.0 to 9.1. ERX2S. 5 %. 0.10 to 0.20. 2010 4 1 RJJ03G0718-0200. (Previous: ADJ-208-890). Rev.2.00. 2006.03.01. . . 2SJ160, 2SJ161, 2SJ162 . . THERMAL CHARACTERISTICS. Characteristics. Symbol. Max. Unit. Thermal Resistance, Junction to Case. JC. 0.875. _C/W. Maximum ratings are those