Description
2SD2012, TOS, TO-220F, Semiconductors, Integrated Circuits (ICs)
Part Number | 2SD2012 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Toshiba |
Description | TRANS NPN 60V 3A TO-220F |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
Power - Max | 25W |
Frequency - Transition | 3MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220F |
Image |
2SD2012
TOSHBIA
56745
0.81
Honch E-Technology co., Limited
2SD2012
TOSHI
380
1.855
Acon Electronics Limited
2SD2012(F)
TOSIBA
1000
2.9
Eparts Electronics Co Ltd
2SD2012 D2012
TOSIHBA
6000
3.945
N&S Electronic Co., Limited
2SD2012
TOSHIDA
52632
4.99
Innovation Best Electronics Technology Limited