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Description
Datasheet 2SC5200 . NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw. 1 of 4. Copyright 2013 Unisonic Technologies Co., Ltd. QW-R214-005, B. POWER Jan 1, 2009 2SC5200 /FJL4315 NPN Epitaxial Silicon T ransistor. 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com. Sep 28, 2009 2SC5200 . High power NPN epitaxial planar bipolar transistor. Features. High breakdown voltage VCEO = 230 V. Typical fT = 30 MHz. UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD. 1. QW-R214-005,A. POWER AMPLIFIER. APPLICATIONS. Jan 1, 2009 High Voltage : VCEO= -250V. Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5200 /FJL4315.
| Part Number | 2SC5200N |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Toshiba |
| Description | TRANS NPN 230V 15A TO-3PL |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 230V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Power - Max | 150W |
| Frequency - Transition | 30MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Image |  |
2SC5200N(S1,E,S)
TOSHBIA
180
1.82
SUNTOP SEMICONDUCTOR CO., LIMITED
2SC5200N(S1,E,S)
TOSHI
18000
2.3175
MY Group (Asia) Limited
2SC5200N
TOSIBA
26567
2.815
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
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2000
3.3125
Redstar Electronic Limited
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TOSHIDA
10000
3.81
Prime Semiconductors LLP
