Description
PDsingle. 575. mW. Junction and Storage Temperature. TJ, Tstg. 55 to +150. C . Stresses exceeding those listed in the Maximum Ratings table may damage 2SA970 . TRANSISTOR(PNP). 1. EMITTER. 2. COLLECTOR. 3. BASE. MAXIMUM RATINGS(Ta=25 unless otherwise noted). Symbol. Parameter. Value. Units.
Part Number | 2SA970 |
Brand | Toshiba |
Image |
2SA970
TOSHBIA
5357
1.85
E-Core Electronics Co.
2SA970
TOSHI
5500
2.8625
AAC Technology Co., Limited
2SA970
TOSIBA
188
3.875
RX ELECTRONICS LIMITED
2SA970
TOSIHBA
960
4.8875
Yingxinyuan INT'L (Group) Limited
2SA970
TOSHIDA
55515
5.9
Hong Kong In Fortune Electronics Co., Limited