Part Number | 2SA965-O(TPE6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Toshiba |
Description | TRANS PNP 800MA 120V TO226-3 |
Series | - |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
Power - Max | 900mW |
Frequency - Transition | 120MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | LSTM |
Image |
2SA965-O(TE6,F,M)
TOSHBIA
8000
0.73
MY Group (Asia) Limited
2SA965-O(TPE6,C)
TOSHI
2500
1.26
Yingxinyuan INT'L (Group) Limited
2SA965-O(TPE6
TOSIBA
6000
1.79
RX ELECTRONICS LIMITED
2SA965-O(TPE6
TOSIHBA
6000
2.32
AIC Semiconductor Co., Limited
2SA965-O
TOSHIDA
965
2.85
HK HEQING ELECTRONICS LIMITED