(5/5) based on 20 customer reviews
Description
Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with 2010 4 1 . . 2010 4 1 NEC . 2SA812 -M4. PNP Silicon. Epitaxial Transistors. Features. High DC Current Gain: 90 hFE 600.(VCE=-6.0V, IC=-1mA). High voltage: VCEO=-50V. Maximum 2010 4 1 2SC1623A. 2SD596A. MOS FET. 2SJ461A. 2SK2158A. QN7002. A . 2SA812A-T1B-AT/JM. 2SA812 -T1B-A/JM. S Bi. R8C/33A . R8C/LAPS . POR *1. . . EEPROM. R1EX24xxx . R1EX25xxx . . . LCD. 2SA812 /2SC1623
| Part Number | 2SA812 |
| Brand | Toshiba |
| Image |  |
2SA812
TOSHBIA
5000000
1.15
Hongkong Shengshi Electronics Limited
2SA812
TOSHI
30522
2.395
Sino Star Electronics (HK) Co.,Limited
2SA812
TOSIBA
90000
3.64
Belt (HK) Electronics Co
2SA812
TOSIHBA
13000
4.885
Cicotex Electronics (HK) Limited
2SA812
TOSHIDA
38000
6.13
Yingxinyuan INT'L (Group) Limited
