(5/5) based on 15 customer reviews
Description
DC-DC. Portable appliance. Power management. Absolute Maximum Ratings (TA=25 Unless Otherwise Noted). Symbol. 2N7002KW . Parameter. Marking. Jun 15, 2016 2N7002KW -AU. ELECTRICAL CHARACTERISTICS. VDD. VOUT. VIN. RG. RL. Switching. Test Circuit. Gate Charge. Test Circuit. VDD. VGS. May 13,2015-REV.02. 2N7002KW . ELECTRICAL CHARACTERISTICS. VDD. VOUT. VIN. RG. RL. Switching. Test Circuit. Gate Charge. Test Circuit. VDD. VGS. The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. SOT-323 Plastic-Encapsulate MOSFETS. 2N7002KW N-Channel MOSFET. FEATURE.
| Part Number | 2N7002KW |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Toshiba |
| Description | MOSFET N-CH 60V 0.31A SOT323 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-323 |
| Package / Case | SC-70, SOT-323 |
| Image |  |
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