Description
Datasheet 1SS383 . 7.5. 8.0. 8.5. 0.1. 1. 10. 100. 1000. Tr. XP151A13A0MR-. G. D1, 2. 1SS383 . VOUT +3.3 V. RFB1. 180 k . RSEN 100 m . CFB. 82pF. FB. RFB2. 68 k . -6 (VIN=2.4 3V IOUT=50mA IOUT HIGH=2mA). Tr. XP151A13A0MR. D1, 2. 1SS383 . VOUT HIGH. +9V. VOUT. +3.3V. RFB1. 180kohm. RSEN. 100mohm. 1SS383 . OnSemiconductor. SOT343. BAS40-07. SOT143. Schottky Diodes. 1SS387. Toshiba. SC79. BAS16-02V. SC79. General Purpose Diodes. 1SS387. 1SS383 ,1SS384. MA4ZD03/14. ROHM. RB480K,RB481K. HSB0104YP. 1SS402 . MA4Z713. INFINEON. Agilent. BAT62-07W. HSMS281K/282K. HSB226YP. www.renesas.com. 2006.07. Renesas Diodes/RFID Status List. . /RFID. . . .
Part Number | 1SS383 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Arrays |
Brand | Toshiba |
Description | DIODE ARRAY SCHOTTKY 40V USQ |
Series | - |
Packaging | Tape & Reel (TR) |
Diode Configuration | 2 Independent |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 40V |
Current - Average Rectified (Io) (per Diode) | 100mA |
Voltage - Forward (Vf) (Max) @ If | 600mV @ 100mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 5µA @ 40V |
Operating Temperature - Junction | 125°C (Max) |
Mounting Type | Surface Mount |
Package / Case | SC-82 |
Supplier Device Package | USQ |
Image |
1SS383
TOSHBIA
5000000
0.13
Hongkong Shengshi Electronics Limited
1SS383(TE85L)
TOSHI
92790
0.625
Pivot Technology Co., Ltd.
1SS383
TOSIBA
42100
1.12
WIN AND WIN ELECTRONICS LIMITED
1SS383
TOSIHBA
15000
1.615
DES TECHNOLOGY (HK) LIMITED
1SS383
TOSHIDA
16000
2.11
Yingxinyuan INT'L (Group) Limited