Description
1SS106 . Silicon Schottky Barrier Diode. Features. * Detection efficiency is very good. * Small temperature coefficient. * High reliability with glass seal. May 27, 2009 ( , ). EXTN. 10K. MPS92. 1SS106 . R. SENSOR PLATE. 200K. P. R. R=1M ,1/4W @115AC / 220AC. 8.
Part Number | 1SS106 |
Brand | Toshiba |
Image |
1SS106
TOSHBIA
5000
1
Belt (HK) Electronics Co
1SS106
TOSHI
13005
2.275
Yingxinyuan INT'L (Group) Limited
1SS106 ISS106
TOSIBA
99848
3.55
Cicotex Electronics (HK) Limited
1SS106
TOSIHBA
118070
4.825
Hong Kong In Fortune Electronics Co., Limited
1SS106
TOSHIDA
20000
6.1
Ysx Tech Co., Limited