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Description
Page 1. SS32, SS33, SS34, SS35, SS36 www.vishay.com. Vishay General Semiconductor. Revision: 04-Aug-15. 1. Document Number: 88751. A. For this example, a 3.0 A current rating is adequate. B. For robust design use a 30 V 1N5824 Schottky diode or any suggested fast recovery diode in the Table rated to 100-V. 31DF1. HER302. The following diodes are all rated to 100-V. 50WF10. MUR410. HER602. MBR320P. SR302. 30 V. 1N5821. 50WQ03. 1N5824 . 6. 7. 8. 9. 10. 200. 47. 1.0. MPS A55. +. MPS A05. 10/25V. MJE 13005. 47/25V. 1N4934. +. 1N4937. 1N4934. 1000/25V. 1000/25V. 1N4934. 1N5824 . 2200/10V. Part Number. Part Number. Part Number. 1N5823. 1N6872U. 1N6902UTK3CS. 1N6940UTK3CS. 1N5824 . 1N6872UTK2. 1N6903UTK3. 1N6941UTK3. 1N5825.
| Part Number | 1N5824 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Toshiba |
| Description | DIODE SCHOTTKY 5A 30V TOPHAT |
| Series | - |
| Packaging | Bulk |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 370mV @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10mA @ 30V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Image |  |
1N5824
TOSHBIA
10000
1.79
CRYSTALTEK CO., LIMITED
1N5824
TOSHI
5000
2.6325
HITO TECHNOLOGY LIMITED
1N5824
TOSIBA
42500
3.475
Cicotex Electronics (HK) Limited
1N5824
TOSIHBA
800
4.3175
Hong Kong In Fortune Electronics Co., Limited
1N5824
TOSHIDA
320000
5.16
Analog Technology Limited
