Description
Datasheet 1N5820 - 1N5822. 3.0A SCHOTTKY BARRIER RECTIFIERS. Features and Benefits. . Guard Ring Die Construction for Transient Protection. . Low Power Loss 1N5820 , 1N5821, 1N5822 www.vishay.com. Vishay General Semiconductor. Revision: 13-Aug-13. 1. Document Number: 88526. For technical questions within 1N5820 and 1N5822 are Preferred Devices. Axial Lead Rectifiers. This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode The 1N5820 axial leaded Schottky rectifier has been opti- mized for very low forward voltage drop, with moderate leakage. Typical applications are in switching n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED. FEATURES AND BENEFITS. Symbol. Parameter. Value. Unit. 1N5820 1N5821
Part Number | 1N5820 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Toshiba |
Description | DIODE SCHOTTKY 20V 3A DO201AD |
Series | - |
Packaging | Cut Tape (CT) |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 475mV @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500µA @ 20V |
Capacitance @ Vr, F | 190pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Supplier Device Package | DO-201AD |
Operating Temperature - Junction | -65°C ~ 125°C |
Image |
1N5820
TOSHBIA
180
1.75
SUNTOP SEMICONDUCTOR CO., LIMITED
1N5820
TOSHI
30000
2.3725
QUARKTWIN TECHNOLOGY LIMITED
1N5820
TOSIBA
3680
2.995
ONSTAR ELECTRONICS CO., LIMITED
1N5820
TOSIHBA
40000
3.6175
Bonase Electronics (HK) Co., Limited
1N5820
TOSHIDA
1000
4.24
KK Wisdom Limited