Toshiba

Description

Rev. 2.4. 02-Jun-14. 1. Document Number: 85816. For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. Sep 9, 2011 ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and Jul 25, 2002 IZT (mA). ( ). ( ). (mA). ( A). (V). IR (mA). IZM (mA). 1N4728. 3.3. 76. 10. 400. 1.0 . 100. 1. 1380. 276. 1N4729. 3.6. 69. 10. 400. 1.0. 100. 1. 1260. 252. 1N4730. 3.9 . 64. 9. 400. 1.0. 50. 1. 1190. 234. 1N4731. 4.3. 58. 9. 400. 1.0. 10. 1. 1070. 217. 1N4732. 4.7. 53. 8. 500. 1.0. 10. 1. 970. 193. 1N4733 . 5.1. 49. 7. Temperature. Coefficient. @ IZT. VZ @ IZT. IZT. ZZT @ IZT. ZZK @ IZK. IZK. IR. @ VR. IZS. (V). (mA). ( ). ( ). (mA). ( A). (V). (mA). %/ C. 1N4728A. 3.3. 76. 10. 400 . 1.0. 100. 1.0. 1380. -0.08 to -0.05. 1N4729A. 3.6. 69. 10. 400. 1.0. 100. 1.0. 1260 . -0.08 to -0.05. 1N4730A. 3.9. 64. 9.0. 400. 1.0. 50. 1.0. 1190. -0.07 to -0.02. Jan 1, 2011 IR @VR. VR. IR. IZM. Volts. mA. OHMS. OHMS. mA. uA. Volts. mA. mA. 1N4728. 3.3. 76. 10. 400. 1. 100. 1. 1380. 276. 1N4729. 3.6. 69. 10. 400. 1. 100. 1. 1260. 252. 1N4730. 3.9. 64. 9. 400. 1. 50. 1. 1190. 234. 1N4731. 4.3. 58. 9. 400. 1. 10. 1 . 1070. 217. 1N4732. 4.7. 53. 8. 500. 1. 10. 1. 970. 193. 1N4733 .