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Part Number | TK35A08N1S4X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 80V 35A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 12.2 mOhm @ 17.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image | ![]() |
TK35A08N1S4X
TOSHBIA
6711
0.38
MASSTOCK ELECTRONICS LIMITED
TK35A08N1,S4X
TOSHI
180
1.99
SUNTOP SEMICONDUCTOR CO., LIMITED
TK35A08N1,S4X
TOSIBA
14000
3.6
MY Group (Asia) Limited
TK35A08N1S4X
TOSIHBA
21090
5.21
N&S Electronic Co., Limited
TK35A08N1S4X
TOSHIDA
13590
6.82
N&S Electronic Co., Limited