Part Number | TK34E10N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 75A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 103W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 17A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK34E10N1,S1X
TOSHBIA
5586
0.2
MY Group (Asia) Limited
TK34E10N1S1X(S
TOSHI
843
1.22
BULE SKY ELECTRONIC LIMITED
TK34E10N1,S1X(S
TOSIBA
154
2.24
ASIAWAY (H.K.) LIMITED
TK34E10N1,S1X(S
TOSIHBA
9226
3.26
Aspr (ShenZhen) Technology Co.,Ltd
TK34E10N1,S1X(S
TOSHIDA
4931
4.28
TLF ELECTRONICS LTD