Description
MOSFET N/P-CH 30V 0.4A/0.2A US6 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6
Part Number | SSM6L09FUTE85LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET N/P-CH 30V 0.4A/0.2A US6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 400mA, 200mA |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 200MA, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V |
Power - Max | 300mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
SSM6L09FUTE85LF
TOSHBIA
8812
1.83
Cinty Int'l (HK) Industry Co., Limited
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TOSHI
192
3.335
Corich International Ltd.
SSM6L09FUTE85LF
TOSIBA
2000
4.84
Yingxinyuan INT'L (Group) Limited
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TOSIHBA
565000
6.345
TERNARY UNION CO., LIMITED
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TOSHIDA
131000
7.85
CIS Ltd (CHECK IC SOLUTION LIMITED)