Part Number | SSM6J503NULF(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P CH 20V 6A 2-2AA1A |
Series | U-MOSVI |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 32.4 mOhm @ 3A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |
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SSM6J503NULF(T
TOSHBIA
12916
0.66
Ande Electronics Co., Limited
SSM6J503NU,LF(T
TOSHI
18000
1.5225
MY Group (Asia) Limited
SSM6J503NULF(T
TOSIBA
10116
2.385
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6J503NU,LF(T
TOSIHBA
1000
3.2475
ONSTAR ELECTRONICS CO., LIMITED
SSM6J503NU,LF(T
TOSHIDA
6000
4.11
Takson Electronics (H.K.) Co., Ltd.